Temperature dependence of the lasing threshold current of double heterostructure injection lasers due to drift current loss
- 1 September 1980
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (9) , 5038-5040
- https://doi.org/10.1063/1.328385
Abstract
Contact-limited, ambipolar transport, which describes the drift current behavior of minority carriers not confined to the active layer of double heterostructure injection lasers, is used to predict different behavior than previous calculations for the temperature dependence of the threshold current for lasing. The high-temperature coefficients of some lasers may more easily be explained using the model.This publication has 14 references indexed in Scilit:
- Temperature dependence of InGaAsP double-heterostructure laser characteristicsElectronics Letters, 1979
- Theoretical and experimental study of threshold characteristics in InGaAsP/InP DH lasersIEEE Journal of Quantum Electronics, 1979
- 1.5 µm InGaAsP/InP DH Laser with Optical Waveguide StructureJapanese Journal of Applied Physics, 1979
- The temperature dependence of threshold current for double-heterojunction lasersJournal of Applied Physics, 1979
- Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure LasersJapanese Journal of Applied Physics, 1979
- Low-threshold 1.25-μm vapor-grown InGaAsP cw lasersApplied Physics Letters, 1979
- Physical mechanisms of carrier leakage in DH injection lasersJournal of Applied Physics, 1978
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- Threshold temperature characteristics of double heterostructure Ga1−xAlxAs lasersJournal of Applied Physics, 1975
- How much Al in the AlGaAs–GaAs laser?Journal of Applied Physics, 1974