Carrier leakage and temperature dependence of InGaAsP lasers
- 1 August 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3) , 217-218
- https://doi.org/10.1063/1.94305
Abstract
A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.Keywords
This publication has 3 references indexed in Scilit:
- Direct measurement of the carrier leakage in an InGaAsP/InP laserApplied Physics Letters, 1983
- Evidence for Auger and free-carrier losses in GaInAsP/InP lasers: Spectroscopy of a short wavelength emissionApplied Physics Letters, 1982
- Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasersElectronics Letters, 1980