Direct measurement of the carrier leakage in an InGaAsP/InP laser
- 15 June 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (12) , 1000-1002
- https://doi.org/10.1063/1.93841
Abstract
Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions.Keywords
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