Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers
- 1 May 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (5) , 3172-3175
- https://doi.org/10.1063/1.329182
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976