Band-gap enhanced carrier heating in InGaAsP/InP double heterostructure light-emitting diodes

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Abstract
Carrier (electron) temperature in InGaAsP/InP double heterostructure light-emitting diodes (LED’s) was analyzed in detail over a wide band-gap range corresponding to the wavelength range of 1.15–1.5 μm. The carrier temperature was shown to be uniquely determined by the injected carrier density at each wavelength. It was found, however, that the rise of the carrier temperature above the lattice temperature at the 1.5-μm wavelength to be approximately three times larger, compared at the same injection level, than that observed below 1.3 μm. This is related to the enhanced LED current-power sublinearity at 1.5 μm. An inefficient carrier cooling at this quaternary composition was suggested as a major cause for this distinct band-gap dependence.