Light-current characteristics of InGaAsP light emitting diodes
- 1 September 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (5) , 405-407
- https://doi.org/10.1063/1.92753
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Radiance saturation in small-area GaInAsP/InP and GaAlAs/GaAs LED'sIEEE Transactions on Electron Devices, 1981
- Temperature dependence of threshold of InGaAsP/InP double-heterostructure lasers and Auger recombinationApplied Physics Letters, 1981
- Temperature dependence of photoluminescence of n-InGaAsPJournal of Applied Physics, 1981
- Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser-threshold-current temperature sensitivityApplied Physics Letters, 1981
- Calculated absorption, emission, and gain in In0.72Ga0.28As0.6P0.4Journal of Applied Physics, 1980
- The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band AbsorptionJapanese Journal of Applied Physics, 1980
- Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasersElectronics Letters, 1980
- Temperature dependence of InGaAsP double-heterostructure laser characteristicsElectronics Letters, 1979
- Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure LasersJapanese Journal of Applied Physics, 1979