Temperature dependence of photoluminescence of n-InGaAsP

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Abstract
The temperature dependence (from 6 to 300 K) of the near band gap photoluminescence (PL) of n‐type InGaAsP is investigated. These layers, epitaxially grown on InP substrates, span the entire range of lattice matched compositions of the quaternary alloy. The spectral width of the PL emission and its temperature dependence are found not to vary with composition. However, compositional grading, especially evident at the center of the InGaAsP alloy range, often results in significant linewidth increase. These results are correlated with double crystal x‐ray diffraction measurements. The experimental results are compared with predictions of van Roosbroeck–Shockley formalism.