Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser-threshold-current temperature sensitivity
- 15 February 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (4) , 193-195
- https://doi.org/10.1063/1.92317
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- The temperature dependence of threshold current for double-heterojunction lasersJournal of Applied Physics, 1979
- Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure LasersJapanese Journal of Applied Physics, 1979
- Carrier density dependence of Auger recombinationSolid-State Electronics, 1978
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- Calculated spectral dependence of gain in excited GaAsJournal of Applied Physics, 1976