1.5 µm Wavelength InGaAsP/InP DH LED with Improved Radiance Characteristics

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Abstract
The effect of the composition of the carrier-confining layer on the radiance performance of an InGaAsP/InP DH LED at a wavelength of 1.5 µm was investigated. From precision spectrum measurements, the confining layer grown by conventional liquid phase epitaxy was found to allow electrons in the active layer to leak over the heterobarrier into the confining layer. This problem was eliminated by introducing an InP confining layer grown by a new technique, in which a reduced temperature and a thick melt were used. More than 50% improvement of radiance was realized and power coupled into a 50 µm core, 0.2 NA, graded index fiber in excess of 20 µW was achieved at 100 mA.