InP-GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelength
- 15 February 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (4) , 234-236
- https://doi.org/10.1063/1.90002
Abstract
InP/GaxIn1−xAsyP1−y/GaxIn1 −x AsyP1−y double‐heterostructure LED’s in a 1.5‐μm‐wavelength region have been fabricated by the LPE method. The half‐width value of the spectrum is about 1100 Å, and the external quantum efficiency is 1.5% for undoped active layers of Ga0.28In0.72As0.77P0.23. The threshold current density of the laser oscillation at 1.52 μm and 300 K is 104 A/cm2 μm. No symptom of an initial degradation has been observed.Keywords
This publication has 8 references indexed in Scilit:
- Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μmElectronics Letters, 1977
- 1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room TemperatureJapanese Journal of Applied Physics, 1977
- Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasersApplied Physics Letters, 1977
- Crack formation in InP-GaxIn1−xAs-InP double-heterostructure fabricationApplied Physics Letters, 1976
- Spectral losses of low-OH-content optical fibresElectronics Letters, 1976
- Liquid phase epitaxial growth of InGaAs on InPJournal of Crystal Growth, 1976
- Efficient lattice-matched double-heterostructure LED’s at 1.1 μm from GaxIn1−xAsyP1−yApplied Physics Letters, 1976
- Growth and Characterization of InP-lnGaAsP Lattice-Matched HeterojunctionsJournal of the Electrochemical Society, 1973