Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocations
- 1 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (5) , 380-382
- https://doi.org/10.1063/1.99472
Abstract
The dependence of the critical layer thickness hc on mole fraction x of Si1−xGex/Si heterostructures is determined by direct observations of misfit dislocations by using the electron beam induced current (EBIC) technique and transmission electron microscopy (TEM). The EBIC images of the Si1−xGex/Si interfaces show square‐grid patterns running in the 〈110〉 directions. These patterns are identified by TEM observation to be misfit dislocations generated at the Si1−xGex/Si interface. The dependence of hc on x is compared with the results reported by R. People and J. C. Bean [Appl. Phys. Lett. 4 7, 322 (1985) and 4 9, 229 (1986)]. The comparison reveals that inconsistency exists between them, especially in the range of xhc’s.Keywords
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