Superlattice AlAs/AlInAs-oxide current aperture for long wavelength InP-based vertical-cavity surface-emitting laser structure

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Abstract
A superlattice AlAs/AlInAs structure which can be formed on an InP substrate is proposed and demonstrated for use in oxide confinement long wavelength surface emitting lasers. The large strain of AlAs layers is relaxed by the use of a superlatticestructure showing no defects and uniform oxidations. Also, an AlAs layer on an InP substrate provides us with a relatively large heterobarrier, and will be useful for improving temperature characteristics of long-wavelength vertical-cavity surface-emitting lasers. A current aperture of a few micrometers in diameter was formed by precisely controlling the oxidation time. We have demonstrated a current confinement by this oxide aperture. Low-threshold long-wavelength vertical-cavity surface-emitting lasers with this oxide confinement structure are expected.