Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region
- 7 July 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (1) , 25-27
- https://doi.org/10.1063/1.119459
Abstract
We proposed and demonstrated a novel design for long wavelength (1.3 μm) vertical-cavity surface-emitting lasers (VCSELs). In this design, oxygen-implanted current-confinement regions were formed in a GaAs/AlGaAs Bragg reflector which is the bottom mirror wafer bonded to an AlGaInAs/InP cavity consisting of nine strain-compensated quantum wells. Room- temperature continuous-wave (cw) operation of 1.3 μm-VCSELs with a record low cw threshold current density of 1.57 kA/cm2 and a record low cw threshold current of 1 mA have been realized.Keywords
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