1.3-μm Vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (1) , 8-10
- https://doi.org/10.1109/68.554153
Abstract
We demonstrate, for the first time, double-bonded AlGaInAs strain-compensated quantum-well 1.3-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-well active layers sandwiched by two InP layers. The lasers have operated under pulsed conditions at room temperature. A record low pulsed threshold current density of 4.2 kA/cm/sup 2/ and a highest maximum light output power greater than 4.6 mW have been achieved. The maximum threshold current characteristic temperature T/sub 0/ of 132 K is the best for any long wavelength VCSELs. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-/spl mu/m VCSELs.Keywords
This publication has 8 references indexed in Scilit:
- Laterally oxidized long wavelength cw vertical-cavity lasersApplied Physics Letters, 1996
- Low threshold room temperature continuous wave operationof 1.3 µm GaInAsP/InPstrained layer multiquantum well surface emitting laserElectronics Letters, 1996
- Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasersIEEE Photonics Technology Letters, 1995
- Ultrahigh temperature and ultrahigh speed operationof1.3 µm strain-compensated AlGaInAs/InP uncooled laser diodesElectronics Letters, 1995
- Low threshold, wafer fused long wavelength vertical cavity lasersApplied Physics Letters, 1994
- High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applicationsIEEE Journal of Quantum Electronics, 1994
- Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesApplied Physics Letters, 1991
- Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integrationApplied Physics Letters, 1990