Carrier induced transient electric fields in a p-i-n InP-InGaAs multiple-quantum-well modulator
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 32 (1) , 43-52
- https://doi.org/10.1109/3.481919
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Picosecond time-resolved measurements of electroabsorption in an InGaAs/GaAs multiple quantum well p-i-n modulatorApplied Physics Letters, 1992
- Repression and speed improvement of photogenerated carrier induced refractive nonlinearity in InGaAs/InGaAsP quantum well waveguideElectronics Letters, 1991
- Fast escape of photocreated carriers out of shallow quantum wellsApplied Physics Letters, 1991
- High-power extremely shallow quantum-well modulatorsIEEE Photonics Technology Letters, 1991
- Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriersElectronics Letters, 1991
- Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturationApplied Physics Letters, 1990
- High-speed absorption recovery in quantum well diodes by diffusive electrical conductionApplied Physics Letters, 1989
- Thermionic emission and Gaussian transport of holes in a GaAs/As multiple-quantum-well structurePhysical Review B, 1988
- Photoconductive response time of a multiple quantum well pin modulatorElectronics Letters, 1988
- Tunable superlattice p-i-n photodetectors: characteristics, theory, and applicationIEEE Journal of Quantum Electronics, 1988