Thermionic emission and Gaussian transport of holes in a GaAs/As multiple-quantum-well structure
- 15 September 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (9) , 6160-6165
- https://doi.org/10.1103/physrevb.38.6160
Abstract
We present and test a modified thermionic emission model for time-resolved charge-carrier transport perpendicular to the layers of multiple quantum-well structures in an electric field. The predictions of the model on the nature (Gaussian transport) and the dynamics (transport times, field dependence of the mobility) of carrier transport agree favorably with our experiments performed for the case of holes and allow an accurate determination of the band offset.Keywords
This publication has 11 references indexed in Scilit:
- Photoconduction dynamics in a GaAs/AlGaAs superlattice photoconductorApplied Physics Letters, 1987
- Resonance-induced quenching of luminescence and reduction of tunneling time inmultiple-quantum-well structuresPhysical Review B, 1987
- Optical properties of AlxGa1−x AsJournal of Applied Physics, 1986
- Improved assessment of structural properties of As/GaAs heterostructures and superlattices by double-crystal x-ray diffractionPhysical Review B, 1986
- Tunneling dynamics of photogenerated carriers in semiconduc- tor superlatticesPhysical Review B, 1986
- Vertical transport in multilayer semiconductor structuresSuperlattices and Microstructures, 1986
- Perpendicular transport across (Al,Ga)As and the Γ to X transitionSuperlattices and Microstructures, 1986
- Hopping mobility in semiconductor superlatticesSuperlattices and Microstructures, 1985
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974