Photoconduction dynamics in a GaAs/AlGaAs superlattice photoconductor

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Abstract
We report on room‐temperature measurements of electron and hole mobilities perpendicularly to the layers of a GaAs/AlGaAs superlattice inserted in a n‐i‐n photoconductor as the intrinsic region. The dynamical behavior of the structure is described by means of a numerical simulation which solves the classical drift‐diffusion transport equations. We discuss the electron and hole mobilities, μn=120 cm2/(V s) and μp=12.5 cm2/(V s) respectively, by referring to the two distinct mechanisms of Bloch and hopping conduction, as well as to the peculiar electronic properties of the superlattices.