Strain effects in epitaxial GaN grown on AlN-buffered Si(111)

This publication has 20 references indexed in Scilit:

• Progress and prospects for GaN and the III–V nitride semiconductors
  Thin Solid Films, 1993
• Infrared lattice vibrations of GaN
  Physica Status Solidi (b), 1992
• Relaxation Process of the Thermal Strain in the GaN/α-Al₂O₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
  Japanese Journal of Applied Physics, 1992
• High-quality GaN grown by reactive sputtering
  Materials Letters, 1991
• Techniques for using emitting probes for potential measurement in rf plasmas
  Review of Scientific Instruments, 1986
• First order Raman scattering in GaN
  Solid State Communications, 1986
• Study of the elastic properties of gallium nitride
  Physica Status Solidi (a), 1978
• Infrared Lattice Vibrations and Free-Electron Dispersion in GaN
  Physical Review B, 1973
• Resonant Raman scattering of TO(A1), TO(E1) and E2 optical phonons in GaN
  Solid State Communications, 1972
• Optical studies of the phonons and electrons in gallium nitride
  Solid State Communications, 1970