Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- 1 October 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (10B) , L1454
- https://doi.org/10.1143/jjap.31.l1454
Abstract
No abstract availableKeywords
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