Quantum well bandgap engineering for 1.5 μm telecom applications
- 1 May 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 74 (1-3) , 66-69
- https://doi.org/10.1016/s0921-5107(99)00536-x
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Narrow band 1.02 Tbit/s (51×20 Gbit/s) soliton DWDM transmission over 1000 km of standard fiber with 100 km amplifier spansPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 3 Tbit/s (160 Gbit/s×19 ch) OTDM/WDM transmission experimentPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layerIEEE Photonics Technology Letters, 1995
- Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structureIEEE Journal of Quantum Electronics, 1994
- Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiersIEEE Journal of Quantum Electronics, 1994
- 1.5 mu m multiquantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gainIEEE Photonics Technology Letters, 1993
- Polarization insensitive multiple quantum well laser amplifiers for the 1300 nm windowApplied Physics Letters, 1993
- Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structureApplied Physics Letters, 1993
- Reduction of lasing threshold current density by the lowering of valence band effective massJournal of Lightwave Technology, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986