Hydrogen interaction with implantation induced point defects in p-type silicon
- 19 February 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (5) , 2562-2567
- https://doi.org/10.1063/1.369575
Abstract
Interaction of hydrogen with implantation induced point defects in p-type Si has been monitored using deep level transient spectroscopy. H ions are implanted into using low doses in the range from to Vacancy and interstitial related defects are observed. Besides irradiation induced defects with levels at and two additional defect levels at 0.28 and 0.51 eV above the valence band edge are resolved. They are identified as hydrogen related after comparison with He, B, and C implanted p-type Si. The generation of these defect levels, in the presence of hydrogen, has been studied as a function of ion dose, sample depth, and impurity content in the as grown Si. The level at shows a saturation effect for higher hydrogen doses. This is attributed to passivation by mobile hydrogen through the formation of neutral complexes. The level at has been assigned to be a complex involving H and B interstitials.
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