Characterization of the Mn acceptor level in GaAs
- 1 August 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3) , 1564-1567
- https://doi.org/10.1063/1.341837
Abstract
We report on deep-level transient spectroscopy investigations of the Mn acceptor level in GaAs, including measurements of the emission and capture of holes and of the capture of electrons. A comparison is made between electron capture rates obtained from space-charge techniques and from photoluminescence decay measurements.This publication has 18 references indexed in Scilit:
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