Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N/sub 2/O
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 421-424
- https://doi.org/10.1109/iedm.1990.237142
Abstract
The electrical and physical characteristics of oxynitride grown in N/sub 2/O gas ambient have been studied. The dielectric growth rate in N/sub 2/O was found to be highly controllable and lower than that in O/sub 2/. Auger electron spectroscopy studies of oxynitride show a nitrogen-rich layer near the Si-SiO/sub 2/ interface. Compared with the control oxide, the oxynitride shows excellent electrical characteristics such as excellent diffusion barrier to dopant (BF/sub 2/), a significant reduction in interface state generation, less electron trapping, and much larger charge-to-breakdown under Fowler-Nordheim stress. A significantly lower threshold voltage shift and degradation of subthreshold swing under hot electron stress were also observed. These improvements can be explained by the nitrogen incorporation at Si-SiO/sub 2/ interface. This new oxynitride shows good promise for future ULSI application.<>Keywords
This publication has 10 references indexed in Scilit:
- The effects of boron penetration on p/sup +/ polysilicon gated PMOS devicesIEEE Transactions on Electron Devices, 1990
- Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processingIEEE Transactions on Electron Devices, 1989
- Improved hot-carrier immunity in submicrometer MOSFETs with reoxidized nitrided oxides prepared by rapid thermal processingIEEE Electron Device Letters, 1989
- Hole trapping and breakdown in thin SiO2IEEE Electron Device Letters, 1986
- Thin SiO2 insulators grown by rapid thermal oxidation of siliconApplied Physics Letters, 1985
- Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structuresApplied Physics Letters, 1985
- Rapid thermal processing of thin gate dielectrics. Oxidation of siliconIEEE Electron Device Letters, 1985
- Thermal nitridation of Si and SiO2for VLSIIEEE Transactions on Electron Devices, 1985
- Advantages of thermal nitride and nitroxide gate films in VLSI processIEEE Transactions on Electron Devices, 1982
- Dielectric breakdown in electrically stressed thin films of thermal SiO2Journal of Applied Physics, 1978