Lossless InAsP-InGaP modulator at 1.3 ?m for optical conversion of radio signals up to 40 GHz
- 1 July 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (7) , 931-933
- https://doi.org/10.1109/68.593354
Abstract
We report on an InAsP-InGaP electroabsorption modulator at 1.3 /spl mu/m integrated with a semiconductor amplifier. The fiber-to-fiber insertion gain reaches +10 dB. The 50-/spl mu/m-long modulator section exhibits a bandwidth of 36 GHz and a -17-dB extinction ratio with 3-V drive voltage. The integrated amplifier produced an RF-link efficiency of -26 dB at 20 GHz without any external amplification.Keywords
This publication has 5 references indexed in Scilit:
- 1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal–organic vapor epitaxyApplied Physics Letters, 1997
- High-efficiency 1.3 /spl mu/m InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic linksIEEE Photonics Technology Letters, 1996
- High-speed tandem of MQW modulators for coded pulse generation with 14-dB fiber-to-fiber gainIEEE Photonics Technology Letters, 1996
- Electroabsorption in lattice-matched InGaAlAs-InAlAs quantum wells at 1.3 μmIEEE Photonics Technology Letters, 1995
- 1.3 µm waveguided electroabsorption modulatorswithstrain-compensated InAsP/InGaP MQW structuresElectronics Letters, 1995