1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal–organic vapor epitaxy
- 6 January 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (1) , 96-98
- https://doi.org/10.1063/1.119319
Abstract
No abstract availableKeywords
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