Characterization ofp-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 × 1014 pcm-2
- 1 November 1999
- journal article
- research article
- Published by Springer Nature in Il Nuovo Cimento A (1971-1996)
- Vol. 112 (11) , 1245-1251
- https://doi.org/10.1007/bf03185590
Abstract
No abstract availableKeywords
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