MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaP Substrates
- 1 February 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (2A) , L275
- https://doi.org/10.1143/jjap.28.l275
Abstract
ZnS x Se1-x epitaxial layers have been grown on GaP (100) substrates by metalorganic chemical vapor deposition (MOCVD). The layer lattice-matched to the substrate shows a better surface morphology and a narrower line width of X-ray diffraction rocking curve.Keywords
This publication has 13 references indexed in Scilit:
- Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVDJapanese Journal of Applied Physics, 1988
- Growth kinetics in the MOVPE of ZnSe on GaAs using zinc and selenium alkylsJournal of Crystal Growth, 1986
- MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and SeJapanese Journal of Applied Physics, 1985
- High resolution transmission and analytical electron microscopy for the characterisation of epilayers and interfaces in MOVPE grown ZnSe1−ySyJournal of Crystal Growth, 1985
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985
- High resolution transmission electron microscopy (HRTEM) of interfaces in epitaxial ZnSeyS1 − y grown by MOCVDJournal of Crystal Growth, 1984
- Growth temperature dependence of crystallographic and luminescent properties of ZnSxSe1−x (0 ⪕ x ⪕ 1) by low-pressure MOVPEJournal of Crystal Growth, 1984
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Thermal Expansion of Zinc Sulfide: 300?1300 KAustralian Journal of Physics, 1981
- X‐Ray Determination of the Thermal Expansion of Zinc SelenidePhysica Status Solidi (b), 1967