High resolution transmission electron microscopy (HRTEM) of interfaces in epitaxial ZnSeyS1 − y grown by MOCVD
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 237-244
- https://doi.org/10.1016/0022-0248(84)90422-6
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Lattice structure at ZnSeGaAs heterojunction interfaces prepared by organometallic chemical vapor depositionThin Solid Films, 1983
- Atomic structure of the NiSi2/(111)Si interfacePhilosophical Magazine A, 1982
- Fast atom bombardment mass spectrometry for applied surface analysisSurface and Interface Analysis, 1982
- Fast atom bombardment mass spectrometry of bovine insulin and other large peptidesJournal of the Chemical Society, Chemical Communications, 1982
- Below the “Scherzer resolution” limit: Fact and artefactUltramicroscopy, 1982
- Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopyPhilosophical Magazine A, 1981
- The preparation of thin samples of III-V semiconductors for TEM studiesJournal of Microscopy, 1977
- Cross-sectional specimens for transmission electron microscopyJournal of Applied Physics, 1974
- Preparation of Large-area Electron-transparent Samples from Silicon DevicesIBM Journal of Research and Development, 1974
- Method of preparing Si and Ge specimens for examination by transmission electron microscopyBritish Journal of Applied Physics, 1962