Lattice structure at ZnSeGaAs heterojunction interfaces prepared by organometallic chemical vapor deposition
- 1 June 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 104 (1-2) , 133-143
- https://doi.org/10.1016/0040-6090(83)90554-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- Fault-free silicon at the silicon/sapphire interfaceApplied Physics Letters, 1982
- Conduction mechanism in low-resistivity n-type ZnSe prepared by organometallic chemical vapor depositionJournal of Applied Physics, 1982
- Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVDJournal of Electronic Materials, 1981
- Molecular beam epitaxial growth of low-resistivity ZnSe filmsApplied Physics Letters, 1979
- Observation of dark line defects in GaP green LED’s under an external uniaxial stressApplied Physics Letters, 1976