Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 180-183
- https://doi.org/10.1016/0022-0248(92)90387-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Very low threshold single quantum well graded-index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxyApplied Physics Letters, 1991
- Interfacial-band discontinuities for strained layers of InxGa1−xAs grown on (100) GaAsJournal of Applied Physics, 1991
- Strained-layer 1.5 μm wavelength InGaAs/InP multiple quantum well lasers grown by chemical beam epitaxyElectronics Letters, 1990
- Linewidth enhancement factor for InGaAs/InP strained quantum well lasersApplied Physics Letters, 1990
- Optoelectronic devices by GSMBEJournal of Crystal Growth, 1990
- Improved 1.5 μm wavelength lasers using high quality LP-OMVPE grown strained-layer InGaAs quantum wellsJournal of Crystal Growth, 1990
- Band structure engineering of semiconductor lasers for optical communicationsJournal of Lightwave Technology, 1988