Band structure engineering of semiconductor lasers for optical communications
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 6 (8) , 1292-1299
- https://doi.org/10.1109/50.4133
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Optical investigations of the band structure of strained InAs/AlInAs quantum wellsApplied Physics Letters, 1988
- Calculations of the threshold current and temperature sensitivity of A (GaIn)As strained quantum well laser operating at 1.55 μmSuperlattices and Microstructures, 1987
- Effects of coherency strain on the band gap of pseudomorphic InxGa1−xAs on (001) InPApplied Physics Letters, 1987
- Survey of defect-mediated recombination lifetimes in GaAs epilayers grown by different methodsApplied Physics Letters, 1987
- Ridge waveguide injection laser with a GaInAs strained-layer quantum well (λ=1 μm)Applied Physics Letters, 1987
- Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53AsApplied Physics Letters, 1987
- Reduction of lasing threshold current density by the lowering of valence band effective massJournal of Lightwave Technology, 1986
- Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profilingApplied Physics Letters, 1983
- A GaAsxP1−x/GaP strained-layer superlatticeApplied Physics Letters, 1982
- Laser Conditions in SemiconductorsPhysica Status Solidi (b), 1961