A method of determining impurity diffusion coefficients and surface concentrations of drift transistors
- 1 April 1956
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 3 (2) , 97-99
- https://doi.org/10.1109/T-ED.1956.14111
Abstract
In order to control the electrical parameters of drift transistors, it was found necessary to control the impurity concentration gradient in the base. An extension of the space charge widening theory provides a method of calculating this gradient, the surface concentration, and the diffusion coefficient. By this method, the diffusion coefficient of arsenic into germanium at 725°C was found to be 3.1 × 10-12cm2/second and the initial surface concentration was of the order of 1020atoms/cm3. Universal graphs for design calculations and rapid reference are presented.Keywords
This publication has 5 references indexed in Scilit:
- Diffusion of Impurities in GermaniumPhysical Review B, 1954
- Der DrifttransistorThe Science of Nature, 1953
- Diffusion of Donor and Acceptor Elements into GermaniumPhysical Review B, 1952
- Measurement of Diffusion in Semiconductors by a Capacitance MethodPhysical Review B, 1952
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942