Inhomogeneous Field Distribution in Homogeneous Semiconductors Having an N‐Shaped Negative Differntial Conductivity
- 1 January 1966
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 17 (1) , 307-316
- https://doi.org/10.1002/pssb.19660170135
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Electrical transients in high resistivity gallium arsenideSolid-State Electronics, 1964
- Artificial Initiation of Layer‐Like Field Inhomogeneities in CdS Single CrystalsPhysica Status Solidi (b), 1964
- Specific Negative Resistance in SolidsProceedings of the Physical Society, 1963
- A bulk differential negative resistance due to electron tunnelling through an impurity potential barrierPhysics Letters, 1963
- Characteristic Layer‐Like Field Iin Homogeneous Photoconductors in the Pre‐Breakdown Range I. Steady State CasePhysica Status Solidi (b), 1963
- Anwendung elektro-optischer Effekte zur Analyse des elektrischen Leitungsvorganges in CdS-EinkristallenThe European Physical Journal A, 1959