Electrical transients in high resistivity gallium arsenide
- 31 January 1964
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (1) , 17-24
- https://doi.org/10.1016/0038-1101(64)90118-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Photoelectronic Analysis of High Resistivity Crystals: (a) GaAs, (b) Sb2S3Journal of Applied Physics, 1960
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