Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon
- 1 August 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8) , 4378-4381
- https://doi.org/10.1063/1.332675
Abstract
After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 °C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons.This publication has 11 references indexed in Scilit:
- Generation-annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn-around phenomena on oxidized silicon during avalanche electron injectionJournal of Applied Physics, 1983
- Generation-annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized siliconJournal of Applied Physics, 1983
- Generation of Oxide Charge and Interface States by Ionizing Radiation and by Tunnel Injection ExperimentsIEEE Transactions on Nuclear Science, 1982
- Parameter Dependence of RIE Induced Radiation Damage in Silicon DioxideJournal of the Electrochemical Society, 1981
- The effects of water on oxide and interface trapped charge generation in thermal SiO2 filmsJournal of Applied Physics, 1981
- Microstructure Fabrication in Electronic DevicesAnnual Review of Materials Science, 1981
- Annealing of radiation-induced positive charge in MOS devices with aluminum and polysilicon gate contactsJournal of Electronic Materials, 1980
- Electron trapping in SiO2 due to electron-beam deposition of aluminumJournal of Applied Physics, 1978
- Effects of electron-beam radiation on MOS structures as influenced by the silicon dopantJournal of Applied Physics, 1977
- Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 1976