Epitaxial silicon chemical vapor deposition below atmospheric pressure
- 1 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 407-415
- https://doi.org/10.1016/0921-5107(89)90279-1
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- High-quality homoepitaxial silicon films deposited by rapid thermal chemical vapor depositionJournal of Applied Physics, 1989
- Silicon epitaxy at low temperature, using UV cleaning in a reduced pressure CVD systemElectronics Letters, 1988
- Current Status of Reduced Temperature Silicon Epitaxy by Chemical Vapor DepositionJournal of the Electrochemical Society, 1987
- Prebaking and silicon epitaxial growth enhanced by UV radiationJournal of Applied Physics, 1987
- High Yield Luminescence of Lanthanide J‐Levels in Fluoride Glasses with Weak Multiphonon RelaxationJournal of the Electrochemical Society, 1986
- Thin, highly doped layers of epitaxial silicon deposited by limited reaction processingApplied Physics Letters, 1986
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985
- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
- Silicon molecular beam epitaxy with simultaneous ion implant dopingJournal of Applied Physics, 1980