Kink-related noise overshoot in SOI n -MOSFETS operating at 4.2 K
- 12 March 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (6) , 577-579
- https://doi.org/10.1049/el:19920364
Abstract
The low frequency noise behaviour of SOl n-MOSFETs operated at 4.2 K is reported for the first time and compared with room temperature behaviour. It is shown that the noise level increases by a factor of 3–5, and the kink-related noise overshoot becomes much more pronounced on cooling. These results are compared with the noise overshoot observed in bulk devices operating at 4.2 K and a similar explanation for the phenomenon is proposed.Keywords
This publication has 1 reference indexed in Scilit:
- Noise overshoot at drain current kink in SOI MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002