Noise overshoot at drain current kink in SOI MOSFET
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A physics-based MOSFET noise model for circuit simulatorsIEEE Transactions on Electron Devices, 1990
- Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperatureIEEE Transactions on Electron Devices, 1990
- Reduction of kink effect in short-channel MOS transistorsIEEE Electron Device Letters, 1990