Reduction of kink effect in short-channel MOS transistors
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (3) , 120-122
- https://doi.org/10.1109/55.46953
Abstract
A simple analysis of the kink effect in MOS transistors is proposed. This analysis enables a quantitative description of the excess drain current as a function of channel length to be obtained both at room and liquid-helium temperatures. More specifically, it is demonstrated that a reduction of the normalized kink effect Delta I/sub d//I/sub d/ /sub sat/ in short-channel MOS transistors arises from the combined effects of charge sharing and saturation velocity through the lowering of the depletion capacitance and the normalized saturation transconductance.Keywords
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