A Displaced Maxwellian approach to ballistic electron transport in semiconductors
- 30 June 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (12) , 1293-1295
- https://doi.org/10.1016/0038-1098(81)91009-7
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Near ballistic electron transport in GaAs devices at 77°KSolid-State Electronics, 1981
- Ballistic transport in semiconductor at low temperatures for low-power high-speed logicIEEE Transactions on Electron Devices, 1979
- The influence of abrupt electric field variations on the distribution function of hot electronsJournal of Physics and Chemistry of Solids, 1979
- Current transport in narrow-base transistorsSolid-State Electronics, 1977
- Computer simulation of transferred electron devices using the displaced Maxwellian approachIEEE Transactions on Electron Devices, 1974
- Electron energy relaxation time in Si and GeJournal of Physics and Chemistry of Solids, 1973
- Electron dynamics in short channel field-effect transistorsIEEE Transactions on Electron Devices, 1972