Near ballistic electron transport in GaAs devices at 77°K
- 1 January 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (1) , 11-18
- https://doi.org/10.1016/0038-1101(81)90207-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Ballistic transport in semiconductor at low temperatures for low-power high-speed logicIEEE Transactions on Electron Devices, 1979
- Balance equations for high field transport in the finite collision duration regimeSolid State Communications, 1979
- Low-temperature f.e.t. for low-power high-speed logicElectronics Letters, 1977
- Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistorsElectronics Letters, 1976
- Frequency limits of GaAs and InP field-effect transistorsIEEE Transactions on Electron Devices, 1975
- Electron dynamics in short channel field-effect transistorsIEEE Transactions on Electron Devices, 1972
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970