Random telegraph signal: An atomic probe of the local current in field-effect transistors
- 1 February 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (3) , 1734-1741
- https://doi.org/10.1063/1.366892
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Conductance modulation of submicrometer metal–oxide–semiconductor field-effect transistors by single-electron trappingJournal of Applied Physics, 1996
- Evaluation of the Coulomb energy for single-electron interface trapping in sub-μm metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 1994
- Individual defects at the Si:SiO2interfaceSemiconductor Science and Technology, 1989
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984
- Theory of the carrier-density fluctuations in an IGFET near thresholdJournal of Applied Physics, 1975