Discovery of anomalous base regions in transistors
- 15 August 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (4) , 177-179
- https://doi.org/10.1063/1.1654333
Abstract
The theoretical description of transistors has been impeded by the lack of knowledge of the p‐type impurity distributions. A method is described which accurately gives concentration profiles of the boron p‐type regions in transistors. The technique has been used to establish that the base regions in the fastest bipolar transistors are markedly different than usually assumed.Keywords
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