Surface kinetics of chemical beam epitaxy of GaAs
- 13 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (7) , 689-691
- https://doi.org/10.1063/1.103593
Abstract
A new kinetic model for chemical beam epitaxy of GaAs using triethylgallium and arsine is proposed. Both group III and group V species are equally important in the surface reactions. This model can fit experimental data very well. Various aspects of the growth rate as a function of substrate temperature, triethylgallium and arsine flow rates are examined.Keywords
This publication has 10 references indexed in Scilit:
- Reflection high-energy electron-diffraction study of metalorganic molecular-beam epitaxy of GaAs using trimethylgallium and arsenicJournal of Applied Physics, 1990
- Rheed Measurement and Chemical Kinetics of Chemical Beam Epitaxial growth of GaAsMRS Proceedings, 1989
- Determination of as Sticking Coefficients Using Reflection high Energy Electron Diffraction Intensity Oscillations on GaAsMRS Proceedings, 1989
- Kinetic Limits of Monolayer Growth on (001) Gaas by Organometallic Chemical-vapor DepositionPhysical Review Letters, 1988
- A model for the surface chemical kinetics of GaAs deposition by chemical-beam epitaxyJournal of Applied Physics, 1988
- Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devicesJournal of Crystal Growth, 1987
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and ArsineJapanese Journal of Applied Physics, 1986
- Equilibrium gas phase species for MOCVD of AlxGa1−xAsJournal of Crystal Growth, 1986
- Chemical beam epitaxy of InP and GaAsApplied Physics Letters, 1984
- Metalorganic CVD of GaAs in a molecular beam systemJournal of Crystal Growth, 1981