Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
- 12 January 1998
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (2) , 220-222
- https://doi.org/10.1063/1.120691
Abstract
The lattice-mismatch stress-induced two-dimensional-to-three-dimensional morphology change is combined with interfacet adatom migration to selectively assemble parallel chains of InAs islands on top of [11̄0] oriented stripe mesas of sub-100-nm widths on GaAs(001) substrates. On such mesa stripes, prepared in situ via size-reducing epitaxy, deposition of InAs amounts subcritical for island formation on planar GaAs (001) is shown to allow self-assembly of three, two, and single chains of InAs three-dimensional island quantum dots selectively on the stripe mesa tops for widths decreasing from 100 nm down to 30 nm.Keywords
This publication has 17 references indexed in Scilit:
- Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasingSolid-State Electronics, 1996
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBEJapanese Journal of Applied Physics, 1996
- Spatially Confined Chemistry: Fabrication of Ge Quantum Dot ArraysThe Journal of Physical Chemistry, 1996
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substratesJournal of Crystal Growth, 1995
- Surface migration induced self-aligned InAs islands grown by molecular beam epitaxyApplied Physics Letters, 1995
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Lateral variation of indium content in InGaAs grown on GaAs channeled substrates by molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructuresThin Solid Films, 1993
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990