A note on the correlation between the Schottky-diode barrier height and the ideality factor as determined from I-V measurements
- 1 September 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (9) , 320-322
- https://doi.org/10.1109/edl.1983.25748
Abstract
An expression is derived which relates the barrier height and ideality factor of a Schottky diode as determined from I-V measurements. The expression agrees well with data from PtSi diodes formed with a range of Pt thicknesses.Keywords
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