Cl2/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4)
- https://doi.org/10.1143/jjap.20.803
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Surface Damage on Si Substrates Caused by Reactive Sputter EtchingJapanese Journal of Applied Physics, 1981
- Si and SiO2 Etching Characteristics Using Reactive Ion Etching with CF4-Cl2 Gas MixtureJapanese Journal of Applied Physics, 1980
- Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2Journal of the Electrochemical Society, 1979