Surface Damage on Si Substrates Caused by Reactive Sputter Etching
- 1 May 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (5) , 893-900
- https://doi.org/10.1143/jjap.20.893
Abstract
Surface damage on silicon substrates caused by RSE has been investigated. Defects are classified into four categories in order of destruction, namely, precipitates surrounded by elastic strain field, surface roughness pattern, polycrystalline and amorphous silicon, and no defects, based on the results of TEM and RHEED observation. In particular, precipitates which reach a depth more than 500 Å were found to cause OSF. The surface damage consists of contamination (C, F, O) layer, C and defect mixed layer, and defect layer in order from the top. The degree of these defects and contaminations expand with increasing power density and etching duration. RSE conditions, where no defects are formed, were determined, e.g., within 1 minute at 0.4 W cm-2.Keywords
This publication has 10 references indexed in Scilit:
- A study of dry etching-related contaminations on Si and SiOSurface Science, 1979
- Abstract: Mechanisms in plasma etchingJournal of Vacuum Science and Technology, 1978
- Profile control by reactive sputter etchingJournal of Vacuum Science and Technology, 1978
- Ion-surface interactions in plasma etchingJournal of Applied Physics, 1977
- A Study of the Optical Emission from an rf Plasma during Semiconductor EtchingApplied Spectroscopy, 1977
- Investigations on the damage caused by ion etching of SiO2 layers at low energy and high doseSolid-State Electronics, 1977
- Plasma etching in integrated circuit manufacture—A reviewJournal of Vacuum Science and Technology, 1977
- Preferential SiO2Etching on Si Substrate by Plasma Reactive Sputter EtchingJapanese Journal of Applied Physics, 1977
- Plasma reactor design for the selective etching of SiO2 on SiSolid-State Electronics, 1976
- Effect of the Angular Velocity on the Sedimentation Constant of Rod-like Macromolecules in the UltracentrifugeJapanese Journal of Applied Physics, 1963