A study of dry etching-related contaminations on Si and SiO
- 2 July 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 86, 858-865
- https://doi.org/10.1016/0039-6028(79)90468-0
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Etching Characteristics of Various Materials by Plasma Reactive Sputter EtchingJapanese Journal of Applied Physics, 1978
- Ion-surface interactions in plasma etchingJournal of Applied Physics, 1977
- Preferential SiO2Etching on Si Substrate by Plasma Reactive Sputter EtchingJapanese Journal of Applied Physics, 1977
- Dry process technology (reactive ion etching)Journal of Vacuum Science and Technology, 1976
- Auger Electron Spectroscopy of Cleanup‐Related Contamination on Silicon SurfacesJournal of the Electrochemical Society, 1975
- RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon GasesJapanese Journal of Applied Physics, 1974
- Etching Characteristics of Silicon and its Compounds by Gas PlasmaJapanese Journal of Applied Physics, 1973
- Sensitivity of detection of the elements by photoelectron spectrometryAnalytical Chemistry, 1972