12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz

This publication has 7 references indexed in Scilit:

• Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz
  Applied Physics Letters, 2005
• Device Technologies for RF Front-End Circuits in Next-Generation Wireless Communications
  Proceedings of the IEEE, 2004
• Lateral scaling of 0.25 µm InP/InGaAs SHBTs with InAs emitter cap
  Electronics Letters, 2004
• Self-Aligned InP DHBT with$f_tau$and$f_max$Over 300 GHz in a New Manufacturable Technology
  IEEE Electron Device Letters, 2004
• Reduction of base-transit time of InP-GaInAs HBTs due to electron injection from an energy ramp and base-composition grading
  IEEE Transactions on Electron Devices, 2004
• Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors
  Japanese Journal of Applied Physics, 2002
• On the definition of the cutoff frequency f_T
  Proceedings of the IEEE, 1969